the vrf2933 is a gold-metallized silicon n-channel rf power transistor de-signed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. features improved ruggedness v (br)dss = 170v 300w with 22db typ. gain @ 30mhz, 50v excellent stability & low imd common source con? guration available in matched pairs now 14% lower v ds(on) 70:1 load vswr capability at speci? ed operating conditions nitride passivated refractory gold metallization improved replacement for sd2933 thermally enhanced package rohs compliant symbol parameter vrf2933(mp) unit v dss drain-source voltage 170 v i d continuous drain current @ t c = 25c 42 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 648 w t stg storage temperature range -65 to 150 c t j operating junction temperature max 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speci? ed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 170 180 v v ds(on) on state drain voltage (i d(on) = 20a, v gs = 10v) 1.8 2.4 i dss zero gate voltage drain current (v ds = 100v, v gs = 0v) 2.0 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 2.0 a g fs forward transconductance (v ds = 10v, i d = 20a) 8 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4941 rev j 12 -2013 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.27 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. vrf2933 VRF2933MP 50v, 300w, 150mhz d s s g m177 downloaded from: http:///
vrf2933(mp) dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 740 pf c oss output capacitance v ds = 50v 400 c rss reverse transfer capacitance f = 1mhz 32 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, v dd = 50v, i dq = 250ma, p out = 300w 20 25 db d f 1 = 30mhz, v dd = 50v, i dq = 250ma, p out = 300w cw 50 % f 1 = 30mhz, v dd = 50v, i dq = 250ma, p out = 300w cw, 70:1 vswr - all phase angles, 0.2 msec x 20% duty factor no degradation in output power microsemi reserves the right to change, without notice, the speci? cations and information contained herein. 050-4941 rev j 12 -2013 0 5 10 15 20 25 30 0 2 4 6 8 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 0 1 10 100 1 10 100 800 1.0e ? 11 1.0e ? 10 1.0e ? 9 1.0e ? 8 0 10 20 30 40 50 60 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (f) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (a) 5v 5.5v 4.5v 3.5v 6v 6.5v 7.5v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250 s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) pd max t j = 125c t c = 75c typical performance curves i dmax 4v bvdss line downloaded from: http:///
0 0.05 0.10 0.15 0.20 0.25 0.30 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 vrf2933(mp) 050-4941 rev j 12-2013 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 0 50 100 150 200 250 300 350 400 450 500 0 0.5 1 1.5 2 2.5 3 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 12 output power (w pep ) p out , input power (watts pep) figure 6. p out versus p in output power (w pep ) p out , input power (watts pep) figure 7. p out versus p in 50v 40v freq=30mhz freq=65mhz figure 5b, transient thermal impedance model dissipated powe r (watts ) t j (c ) t c (c) z ext are the external therma l impedances: case to sink, sink to ambient, etc. set to zero when modeling onl y the case to junction. z ext .079 .076 .115 .009 .080 .224 table 1 - typical class ab large signal input - output impedance z in - gate shunted with 25 i dq = 250ma z ol - conjugate of optimum load for 300 watts output at v dd =50v freq. (mhz) z in z out 2 23.6 - j 5.5 4.0 - j 0.1 13.5 7.6 - j 10.1 3.9 - j 0.6 27.1 3.5 - j 6.0 3.7 - j 1.1 40.7 2.5 - j 4.0 3.3 - j 1.5 65 1.95 - j 2.07 2.6 - j 1.9 100 1.8 - j 0.66 1.76 - j 0.2 150 1.78 + j 0.5 1.03 + j 1.7 0.3 d = 0.9 0.7 single pulse 0.5 0.1 0.05 50v 40v downloaded from: http:///
30 mhz test circuit vrf2933(mp) 050-4941 rev j 12-2013 l1 output c3 c12 c11 c10 c5 c6 c7 c8 c9 c1 1800pf atc100b ceramic c2, c3, c5, c9, c10, c12 0.1uf 100v c6 680 pf metal clad 500v mica c7 arco 467 mica trimmer c8 100 pf atc 100e ceramic c4, c11 10uf 100v electrolytic fb small ferrite bead u i =125 l1 20 nh 2t #18 0.188"d .2"ll2 38 nh - 2.5t #14 enam. .25" dia. l3 2t #16 on 2x 267300081 .5" beadr1-r2 1k ohm 1/4w r3 100 ohm 1w r4 470 ohm "low inductance" 3w t1 16:1 transforner 4t #20 teflon on rf parts co. t1/2 transformer core t2 9:1 transformer 3t #16 teflon on rf parts co. t1 transformer core vbias r1 r2 r4 l2 rf input c2 t1 c1 r3 fb l3 t2 + 50v c4 + vrf2933 downloaded from: http:///
vrf2933(mp) 050-4941 rev j 12-2013 pin 1 - drain pin 2 - gate pin 3 - source pin 4 - source pin 5 - source m177 (0.63 dia. soe) mechanical data all dimensions are .005 dim min typ max a 0.225 0.230 0.235 b 0.265 0.270 0.275 c 0.860 0.865 0.870 d 1.130 1.135 1.140 e 0.545 0.550 0.555 f 0.003 0.005 0.007 g 0.098 0.103 0.108 h 0.150 0.160 0.170 i 0.280 j 1.080 1.100 1.120 k 0.625 0.630 0.635 f e g h i a b c d ok j .125d nom .135 r seating plane 1 4 2 3 5 adding mp at the end of p/n speci ? es a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%. hazardous material warning: the ceramic portion of the device below the lead plane is beryllium oxide. beryllium oxide dust is highly toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. beo substrate weight: 0.703g. percentage of total module weight which is beo: 9%. downloaded from: http:///
vrf2933(mp) 050-4941 rev j 12-2013 the information contained in the document (unless it is publicly available on the web without access restrictions) is proprieta ry and confiden- tial information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein may not be modi ? ed, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an of ? cer of microsemi. microsemi reserves the right to change the con ? guration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including li- ability or warranties relating to ? tness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speci ? cations believed to be reliable but are not veri ? ed and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers ? nal application. user or customer shall not rely on any data and performance speci ? cations or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi speci ? cally disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost pro ? t. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp downloaded from: http:///
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